PXT8050 transistor (npn) features z compliment to pxt8550 marking: y1 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 1.5 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55 ~ 150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =100ua, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =0.1ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =40v, i e =0 0.1 a emitter cut-off current i ceo v ce =20v, i e =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a h fe(1) v ce =1v, i c =100ma 85 400 dc current gain h fe(2) v ce =1v, i c =800ma 40 collector-emitter saturation voltage v ce(sat) i c =800ma, i b =80ma 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b =80ma 1.2 v base-emitter voltage v be v ce =1v, i c =10ma 1 v base-emitter positive favor voltage v bef i b =1a 1.55 v transition frequency f t v ce =10v,i c =50ma,f=30mhz 100 mhz output capacitance c ob v cb =10v,i e =0,f=1mhz 15 pf classification of h fe(1) rank b c d d3 range 85-160 120-200 160-300 300-400 sot-89 -3l 1. base 2. collector 3. emitter b,nov,2012 sot-89-3l plastic-encapsulate transistors dongguan nanjing electronics ltd., b,nov,2012
0 300 600 900 1200 1 10 100 1000 1 10 100 1000 400 600 800 1000 1200 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 1 10 100 1000 1 10 100 1000 1 10 100 1000 10 100 1000 0.1 1 10 1 10 100 01234567 0.00 0.05 0.10 0.15 0.20 0.25 0.30 10 100 1 10 100 1000 common emitter v ce = 1v v be i c ?? bese-emmiter voltage v be (mv) collector current i c (ma) t a = 2 5 t a = 1 0 0 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (w) t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 1500 1500 1500 300 PXT8050 typical characteristics i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 1v 1500 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) 20 common emitter t a =25 1ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma i b =0.1ma collector current i c (a) collector-emitter voltage v ce (v) static characteristic 2 common emitter v ce =10v t a =25 collector current i c (ma) transition frequency f t (mhz) i c f t ?? b,nov,2012 b,nov,2012
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